DMN2400UFB4
2.0
1.5
1.0
V GS = 4.5V
V GS = 2.5V
V GS = 2.0V
V GS = 1.8V
1.5
1.0
0.5
V DS = 5V
0.5
V GS = 1.5V
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
0
V GS = 1.2V
1 2 3 4
5
0
0
0.5 1 1.5 2 2.5
3
0.8
0.6
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0.8
0.6
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
V GS = 4.5V
T A = 150°C
V GS = 1.8V
0.4
0.2
V GS = 2.5V
V GS = 4.5V
0.4
0.2
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.4 0.8 1.2 1.6
2
0
0
0.25
0.50 0.75 1.00 1.25 1.50
1.6
1.4
1.2
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
V GS = 4.5V
I D = 1.0A
V GS = 2.5.V
I D = 500mA
0.8
0.6
I D , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1.0
0.4
V GS = 2.5V
I D = 500mA
0.8
0.2
V GS = 4.5V
I D = 1.0A
0.6
-50
-25 0 25 50 75 100 125 150
0
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
T J , JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMN2400UFB4
Document number: DS32025 Rev. 5 - 2
3 of 6
www.diodes.com
February 2011
? Diodes Incorporated
相关PDF资料
DMN2400UV-7 MOSFET 2N-CH 20V 1.33A SOT563
DMN2500UFB4-7 MOSF N CH 20V 810A X2-DFN1006-3
DMN26D0UDJ-7 MOSFET 2N-CH 20V 230MA SOT963
DMN26D0UFB4-7 MOSFET N-CH 20V 230MA DFN
DMN26D0UT-7 MOSFET N-CH 20V 230MA SOT523
DMN2990UDJ-7 MOSFET DL NCH 20V 450MA SOT-963
DMN2990UFA-7B MOSFET N CH 20V 510MA
DMN3005LK3-13 MOSFET N-CH 30V 14.5A TO252-3L
相关代理商/技术参数
DMN2400UFB4-7B 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET N-CH 20V 0.75A 3-Pin DFN-H4 T/R 制造商:Diodes Zetex 功能描述:Trans MOSFET N-CH 20V 0.75A 3-Pin DFN-H4 T/R
DMN2400UFB-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2400UFD-7 功能描述:MOSFET N-Ch Enh Mode FET 1.0V Max 0.4W Pd RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2400UV 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2400UV-13 制造商:Diodes Incorporated 功能描述:Trans MOSFET N-CH 20V 1.33A 6-Pin SOT-563 T/R
DMN2400UV-7 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2500UFB4-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V 2-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2500UFB4-7B 制造商:Diodes Incorporated 功能描述: